| PART |
Description |
Maker |
| ENT1-169.406250-3 ENT1 |
12.5kHz Channel VHF High Power TX
|
Radiometrix Ltd
|
| PL611S-18-XXXTI PL611S-18-XXXTIR PL611S-18-XXXUI P |
0.5kHz-125MHz MHz to KHz Programmable ClockTM 0.5kHz - 125MHz的频率，以千赫的可编程ClockTM
|
PhaseLink, Corp.
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BLF178P |
Power LDMOS transistor 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| NTE313 |
Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp
|
NTE[NTE Electronics]
|
| MRF148A |
RF Power FETs(RF功率场效应管) VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| SD2942 |
RF Power Transistors HF/VHF/UHF N - Channel MOSFETs
|
STMICROELECTRONICS[STMicroelectronics]
|
| MRF148A |
N-Channel Enhancement Mode VHF POWER MOSFET
|
Advanced Semiconductor
Tyco Electronics
|
| ASI10708 VFT30-50 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
